PURPOSE: To mass-produce SiC crystal layers with high reproducibility by forming an SiC layer on one side of a silicon substrate and a starting material SiC layer on the other side; melting the substrate; and holding the temp. of the starting material SiC layer higher than the temp. of the SiC layer to deposit the second SiC layer.
CONSTITUTION: Silicon substrate 2 is placed on sample stand 26 in a known vacuum reaction tube provided with a high frequency heating furnace around the belley and replaced with hydrogen, and silicon carbide primary layer 4 and silicon carbide layer 16 are formed on the surface and the side of substrate 2, respectively by a usual vapor phase growing method using a carrier gas such as Ar and a silicon starting material such as SiCl 4 . After cooling, the back side of substrate 2 is treated by a predetermined method, substrate 2 is placed on stand 26 again with the back side upward, and starting material silicon carbide layer 20 is formed. After recooling, layer 4 is turned upward, substrate 2 is melted by heating to about 1500°C, and by holding the melt at a constant temp. for a predetermined time secondary silicon carbide layer 14 is formed. Thus, high quality crystal layers can be mass- produced with high reproducibility, and the side of the resulting layers can be controlled.