Production of silicon carbide crystal layer

  • Inventors:
  • Assignees: Sharp Corp
  • Publication Date: September 08, 1980
  • Publication Number: JP-S55116700-A


PURPOSE: To mass-produce SiC crystal layers with high reproducibility by forming an SiC layer on one side of a silicon substrate and a starting material SiC layer on the other side; melting the substrate; and holding the temp. of the starting material SiC layer higher than the temp. of the SiC layer to deposit the second SiC layer. CONSTITUTION: Silicon substrate 2 is placed on sample stand 26 in a known vacuum reaction tube provided with a high frequency heating furnace around the belley and replaced with hydrogen, and silicon carbide primary layer 4 and silicon carbide layer 16 are formed on the surface and the side of substrate 2, respectively by a usual vapor phase growing method using a carrier gas such as Ar and a silicon starting material such as SiCl 4 . After cooling, the back side of substrate 2 is treated by a predetermined method, substrate 2 is placed on stand 26 again with the back side upward, and starting material silicon carbide layer 20 is formed. After recooling, layer 4 is turned upward, substrate 2 is melted by heating to about 1500°C, and by holding the melt at a constant temp. for a predetermined time secondary silicon carbide layer 14 is formed. Thus, high quality crystal layers can be mass- produced with high reproducibility, and the side of the resulting layers can be controlled. COPYRIGHT: (C)1980,JPO&Japio




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    US-5037502-AAugust 06, 1991Sharp Kabushiki KaishaProcess for producing a single-crystal substrate of silicon carbide