Ring oscillator

  • Inventors:
  • Assignees: Citizen Watch Co Ltd
  • Publication Date: September 05, 1980
  • Publication Number: JP-S55115717-A

Abstract

PURPOSE:To enable to reduce the power consumption, by increasing the threshold voltage through the insertion of a resistor between the bulk and source of C- MOSFET. CONSTITUTION:In the ring oscillator constituted with C-MOSFET, by inserting the resistive element 1 between the scurce electrode and bulk of P.N channel FET, back bias potential is fed between the bulk and source and the body effect is shown. Thus, the channel is caused for modulation, the threshold voltage of FET is increased, and the mutual conductance gm of FET is decreased. Accordingly, the current of ID2 flows to the same gate voltage VG to save power by ID1-ID2.

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Cited By (3)

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    US-7180794-B2February 20, 2007Sharp Kabushiki KaishaOscillating circuit, booster circuit, nonvolatile memory device, and semiconductor device
    US-8044740-B2October 25, 2011S3C, Inc.Temperature compensated RC oscillator for signal conditioning ASIC using source bulk voltage of MOSFET
    WO-03047100-A1June 05, 2003Sharp Kabushiki KaishaOscillateur, survolteur, memoire non volatile, et semi-conducteur